24N60C3 Pwr Xistor
Transcript of 24N60C3 Pwr Xistor
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SPW24N60C3
CoolMOSTM
Power Transistor
Features
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
Maximum ratings, at Tj=25 C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current ID TC=25 C A
TC=100 C
Pulsed drain current1) ID,pulse TC=25 C
Avalanche energy, single pulse EAS ID=12.1 A,VDD=50 V 780 mJ
Avalanche energy, repetitive tAR1),2) EAR ID=24.3 A, VDD=50 V
Avalanche current, repetitive tAR1) IAR A
Drain source voltage slope dv/dtID=24.3 A,
VDS=480 V, Tj=125 CV/ns
Gate source voltage VGS static V
VGS AC (f>1 Hz)
Power dissipation Ptot TC=25 C W
Operating and storage temperature Tj, Tstg C
1.5
24.3
50
Value
24.3
15.4
72.9
20
30
240
-55 ... 150
VDS @ Tj,max 650 V
RDS(on),max 0.16
ID 24.3 A
Product Summary
Type Package Ordering Code Marking
SPW24N60C3 P-TO247 Q67040-S4640 24N60C3
P-TO247
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Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 0.52 K/W
RthJA leaded - - 62
Soldering temperature Tsold1.6 mm (0.063 in.)
from case for 10 s- - 260 C
Electrical characteristics, at Tj=25 C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 A 600 - - V
Avalanche breakdown voltage V(BR)DS VGS=0 V, ID=24.3 A - 700 -
Gate threshold voltage VGS(th) VDS=VGS, ID=1.2 mA 2.1 3 3.9
Zero gate voltage drain current IDSSVDS=600 V, VGS=0 V,
Tj=25 C- 0.1 1 A
VDS=600 V, VGS=0 V,
Tj=150 C- - 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 100 nA
Drain-source on-state resistance RDS(on)VGS=10 V, ID=15.4 A,
Tj=25 C- 0.14 0.16
VGS=10 V, ID=15.4 A,
Tj=150 C- 0.34 -
Gate resistance RG f=1 MHz, open drain - 0.7 -
Transconductance gfs|VDS|>2|ID|RDS(on)max,
ID=15.4 A- 24 - S
Values
Thermal resistance, junction -
ambient
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Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance Ciss - 2800 - pF
Output capacitance Coss - 930 -
Reverse transfer capacitance Crss - 66 -
Effective output capacitance, energy
related3) Co(er) - 114 -
Effective output capacitance, timerelated
4) Co(tr) - 204 -
Turn-on delay time td(on) - 13 - ns
Rise time tr - 21 -
Turn-off delay time td(off) - 73 -
Fall time tf - 6 -
Gate Charge Characteristics
Gate to source charge Q gs - 15 - nC
Gate to drain charge Q gd - 49 -
Gate charge total Q g - 105 137
Gate plateau voltage Vplateau - 5.4 - V
4)Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=480 V,
VGS=10 V, ID=24.3 A,
RG=3.3
VDD=480 V,
ID=24.3 A,
VGS=0 to 10 V
VGS=0 V, VDS=0 V
to 480 V
1)Pulse width limited by maximum temperature Tj,max only
2)Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3)
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
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Parameter Symbol Conditions Unit
min. typ. max.
Reverse Diode
Diode continuous forward current IS - - 24.3 A
Diode pulse current IS,pulse - - 72.9
Diode forward voltage VSDVGS=0 V, IF=24.3 A,
Tj=25 C- 0.96 1.2 V
Reverse recovery time trr - 600 - ns
Reverse recovery charge Q rr - 13 - C
Peak reverse recovery current Irrm - 70 - A
Typical Transient Thermal Characteristics
VR=480 V, IF=IS,
diF/dt=100 A/s
TC=25 C
Values
5)Cth6 models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
RthCA=0 K/W.
Symbol Value Unit Symbol Value Unit
typ. typ.
Rth1 0.00705 K/W Cth1 0.000231 Ws/K
Rth2 0.00972 Cth2 0.0014
Rth3 0.0546 Cth3 0.00197
Rth4 0.0906 Cth4 0.0112
Rth5 0.133 Cth5 0.0612
Cth6 4.45)
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1 Power dissipation 2 Safe operating area
Ptot=f(TC) ID=f(VDS); TC=25 C; D =0
parameter: tp
3 Max. transient thermal impedance 4 Typ. output characteristics
ID=f(VDS); Tj=25 C ID=f(VDS); Tj=25 C
parameter: D=tp/T parameter: VGS
0
50
100
150
200
250
0 40 80 120 160
TC [C]
Ptot[W]
1 s
10 s
100 s
1 ms
10 ms
DC
103
102
101
100
102
101
100
10-1
VDS [V]
ID
[A]
limited by on-state
resistance
single pulse0.01
0.02
0.05
0.1
0.2
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
100
10-1
10-2
10-3
tp [s]
ZthJC[K/W]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V20 V
0
10
20
30
40
50
60
70
80
0 5 10 15 20
VDS [V]
ID[A]
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5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID=f(VDS); Tj=150 C RDS(on)=f(ID); Tj=150 C
parameter: VGS parameter: VGS
7 Drain-source on-state resistance 8 Typ. transfer characteristics
RDS(on)=f(Tj); ID=15.4 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|RDS(on)max
parameter: Tj
4 V 4.5 V 5 V 5.5 V
6 V
20 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 10 20 30 40
ID [A]
RDS(on)
[]
typ
98 %
0
0.1
0.2
0.3
0.4
0.5
-60 -20 20 60 100 140 180
Tj [C]
RDS(on)[]
25 C
150 C
0
20
40
60
80
100
0 2 4 6 8 10
VGS [V]
ID[A]
4 V
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
20 V
0
10
20
30
40
0 5 10 15 20
VDS [V]
ID
[A]
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9 Typ. gate charge 10 Forward characteristics of reverse diode
VGS=f(Q gate); ID=24.3 A pulsed IF=f(VSD)
parameter: VDD parameter: Tj
11 Avalanche SOA 12 Avalanche energy
IAR=f(tAR) EAS=f(Tj); ID=12.1 A; VDD=50 V
parameter: Tj(start)
120 V 480 V
0
2
4
6
8
10
12
0 20 40 60 80 100 120
Qgate [nC]
VG
S[V]
0
200
400
600
800
1000
20 60 100 140 180
Tj [C]
EAS[mJ]
25 C
150 C
25 C, 98%
150 C, 98%
102
101
100
10-1
0 0.5 1 1.5 2 2.5
VSD [V]
IF[A]
125 C 25 C
103
102
101
100
10-1
10-2
10-3
0
5
10
15
20
25
tAR [s]
IAV[A]
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13 Drain-source breakdown voltage 14 Typ. capacitances
VBR(DSS)=f(Tj); ID=0.25 mA C=f(VDS); VGS=0 V; f=1 MHz
15 Typ. Coss stored energy
Eoss= f(VDS)
540
580
620
660
700
-60 -20 20 60 100 140 180
Tj [C]
VBR(DSS)[V]
Ciss
Coss
Crss
105
104
103
102
101
0 100 200 300 400 500
VDS [V]
C[pF]
0
4
8
12
16
20
0 100 200 300 400 500 600
VDS [V]
Eoss
[J]
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Definition of diode switching characteristics
P-TO247: Outline
Dimensions in mm
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Published by
Infineon Technologies AG
Bereich KommunikationSt.-Martin-Strae 53
D-81541 Mnchen
Infineon Technologies AG 1999
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