Ba326のARPES - Kimura LabCoO6 } ¯±} B K w³B ±Cou S fAJs >A Ba3Co2O6(CO3)0.7 I#%< c=9.518...
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C CoO 6 }§¯±}B Kw³B±CouS fAJs >A Ba 3 Co 2 O 6 (CO 3 ) 0.7 I#%< c=9.518 a=b=9.683 c c c c c c c c c c c c c c c c c c c c c c c c c c c c c Ba326のARPES 2014/4/7 Progress Report Ito "10-W …lUTuJ \9uK j"$q…c¥ÈÄPx }¦ szÂrQÀ…BtRÀÄ„‡QÐ^ͬóΠµÊł«L6‹0…B60Ðxß½CoO 6 j/•Ã ye³Î…BtRÄX“oЃ-ø j/•]>à ß'GLÐV¹ :G*¦ j/•4¾N\Qł j/•‚¾<N\Q Б? K. Igarashi et al. , J. Phys.: Conf. Ser. 400, 032024 (2012). j/•Kƒû//üù@(Ł)]>é°ÎBa 3 Co 2 O 6 (CO 3 ) 0.7 ÄrQ
Transcript of Ba326のARPES - Kimura LabCoO6 } ¯±} B K w³B ±Cou S fAJs >A Ba3Co2O6(CO3)0.7 I#%< c=9.518...
CCoO6 Co
Ba3Co2O6(CO3)0.7
c=9.518 a=b=9.683
cccccccccccccccccccccccccccccc
Ba326のARPES 2014/4/7 Progress Report Ito
CoO6
K. Igarashi et al. , J. Phys.: Conf. Ser. 400,
032024 (2012).
// ( ) Ba3Co2O6(CO3)0.7
3D ARPES endstation @BL5U UVSOR-III
Ba3Co2O6(CO3)0.7
θa*
b´
a c
hν
c*
c*
b´*
Σ
Γ
M
Δ
U
T
ΓΓΓMM
AAAA
* L L
H HK
L
AAAAAAL
H HK
MMMΓ
LLLLALLLLLL
A
c*
Δ
c*
U
b´*
T
a*
Σ
c*
Δ
c*
U
b´*
T
a*
Σ
******************
一次元金属鎖 一次元半導体鎖
c*EF
kF kF
c*EF
VBM
(VB)
kVBM kVBM
V0
ρΔE//=5.4meV
300 200 100 EF -100 Binding Energy (meV)
20~30meV ΔE( )
EFEF
20meV
c* U
300 200 100 EF -100 Binding Energy (meV)
c* U
Ba3Co2O6(CO3)0.7CoO6
ΔTCO3