Transistor Dos Bicos
10
June 1999 1/9 VB027 / VB027( 011Y) / VB027(0 12Y) HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C. PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET LOGIC LEVEL COMPATIBLE INPUT DRIVING CURRENT QUASI PROPORTIONAL TO COLLECTOR CURRENT DOUBLE FLAG-ON COIL CURRENT DESCRIPTION The VB027, VB027( 011Y), VB027(0 12Y) is a high voltage power integrated circuit made using the STMicroelec tronics VIPower techno logy, with verti cal curr ent flow power darl ingt on and logi c level compatible driving circuit. Built-in protection circuit for coil current limiti ng and collector voltage clamping allows the device to be used as smart, high voltage, high current interface in advanced electronic i gnition system. TYPE V cl(min) I cl(max) I d(on)max VB027 VB027(011Y) VB027(012Y) 300V 9A 130mA BLOCK DIAGRAM DRIVER GND OVERTEMP. FLAG 1 REFERENCE PROTECTION R SENSE V d HV C FLAG INPUT FLAG 2 QUASI PROP. BASE CURRENT PENTAWATT HV + - + - PENTAWATT HV (011Y) PENTAWATT HV (012Y) ORDER CODES: PENTA WA TT HV PENTA WA TT HV (011Y) VB027 VB027(011Y) PENTAWA TT HV (012Y) VB027(012Y)
-
Upload
wesker2010 -
Category
Documents
-
view
219 -
download
0
Transcript of Transistor Dos Bicos
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 110
June 1999 19
983214 VB027
VB027(011Y) VB027(012Y)
HIGH VOLTAGE IGNITION COIL DRIVERPOWER IC
PRIMARY COIL VOLTAGE INTERNALLY SET
COIL CURRENT LIMIT INTERNALLY SET
LOGIC LEVEL COMPATIBLE INPUT DRIVING CURRENT QUASI PROPORTIONAL
TO COLLECTOR CURRENT
DOUBLE FLAG-ON COIL CURRENT
DESCRIPTION
The VB027 VB027(011Y) VB027(012Y) is a highvoltage power integrated circuit made using theSTMicroelectronics VIPower991522 technology withvertical current flow power darlington and logiclevel compatible driving circuit Built-in protectioncircuit for coil current limiting and collector voltageclamping allows the device to be used as smart
high voltage high current interface in advancedelectronic ignition system
TYPE Vcl(min) Icl(max) Id(on)max
VB027
VB027(011Y)
VB027(012Y)
300V 9A 130mA
BLOCK DIAGRAM
DRIVER
GND
OVERTEMP
FLAG 1
REFERENCE
PROTECTION
RSENSE
Vd HVC
FLAG
INPUT
FLAG 2
QUASI PROP
BASE CURRENT
PENTAWATT HV
+
-
+
-
PENTAWATT HV (011Y)
PENTAWATT HV (012Y)
ORDER CODES
PENTAWATT HVPENTAWATT HV (011Y)
VB027VB027(011Y)
PENTAWATT HV (012Y) VB027(012Y)
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 210
29
VB027 VB027(011Y) VB027(012Y)
1
ABSOLUTE MAXIMUM RATING
THERMAL DATA
CONNECTION DIAGRAM (TOP VIEW)
Symbol Parameter Value Unit
HVc Collector voltage Internally limited V
IC Collector current Internally limited A
Vd Driving stage supply voltage 7 V
Id Driving circuitry supply current 200 mA
VIN Input voltage 10 V
T j Junction operating temperature -40 to 150 degC
Tstg Storage temperature -55 to 150 degC
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case (MAX) 112 degCW
Rthj-amb Thermal resistance junction-ambient (MAX) 625 degCW
PIN FUNCTION (PENTAWATT HV)
No Name Function
1 GND Emitter power ground
2 Vd Driving stage supply voltage
3 HVC Primary coil output signal
4 INPUT Logic input channel
5 DIAG Diagnostic output signal
5
4
3
2
1
HVC
GND
Vd
INPUT
DIAG
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 310
39
VB027 VB027(011Y) VB027(012Y)
ELECTRICAL CHARACTERISTICS (VCC=135V Vd=5V Tj=25ordmC Rcoil=510mΩ Lcoil=7mH unless otherwisespecified)
Note 1 the primary coil current value Icl must be measured 1ms after desaturation of the power stageNote 2 t imef rom input switching VNEG until collector voltage equal 200V( ) Vd - Vbe(on)
Symbol Parameter Test Conditions Min Typ Max Unit
Vcl High volt age clamp -40degCleT jle125degC IC=6A 300 360 400 V
Vcg(sat)Power stage saturationvoltage
IC=6A VIN=4V 15 V
Vcg(sat)td
Power stage saturationvoltage derating intemperature
IC=6A VIN=4V -40degCleT jle125degC 2 V
Id(off) Power-off supply current VIN=04V 10 mA
Id(on) Power-on supply current VIN=4V IC=6A -40degCleT jle125degC 130 mA
VdDriving stage supplyvoltage
45 55 V
Icl Collector current l imit VIN=4V (See note 1) 8 85 9 A
Icl(td)
Collector current limit drift
with temperature See figure 3
VINH High level input voltage 4 55 V
VINL Low level input voltage 0 08 V
IINH High level input current VIN=4V 200 microA
VdiagHHigh level diagnosticoutput voltage
REXT=22KΩ (See figure 1) 35 () Vd V
VdiagLLow level diagnosticoutput voltage
REXT=22KΩ (See figure 1) 05 V
IC(diag1)First threshold levelcollector current
425 45 475 A
IC(diag1)td
First threshold levelcollector current drift with
temperature
See figure 4
IC(diag2)Second threshold levelcollector current
545 58 615 A
IC(diag2)td
Second threshold levelcollector current drift withtemperature
See figure 5
td(off)Turn-off delay time ofoutput current
IC=6A (See note 2) 25 micros
tf(off)Turn-off fall time of output
current IC=6A 8 micros
td(diag)Delay time of diagnosticcurrent
REXT=22KΩ (See figure 1) 1 micros
tr(diag)Turn-on rise time ofdiagnostic current
REXT=22KΩ (See figure 1) 1 micros
tf(diag)Turn-off fall time ofdiagnostic current REXT=22KΩ (See figure 1) 1 micros
1
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 410
49
VB027 VB027(011Y) VB027(012Y)
1
PRINCIPLE OF OPERATION
The VB027 VB027(011Y) VB027(012Y) is mainly
intended as high voltage power switch device driven by alogic level input and interfaces directly to a high energyelectronic ignition coil
T he input VIN of the VB027 VB027(011Y)VB027(012Y) is fed from a low power signal generatedby an external controller that determines both dwell timeand ignition point During VIN high (ge4V) the VB027VB027(011Y) VB027(012Y) increases current in thecoil to the desired internally set current level
When the collector current exceeds 45A the diagnosticsignal is turned high and it remains so until the loadcurrent reaches 58A (second threshold) At that valuethe diagnostic signal is turned low and the microC forces theVIN to the low state During the coil current switch-off the
primary voltage H VC is clamped by a series of Zenerdiodes at an internally set value Vcl typically 360V
The collector current sensed throughthe Rsense is limitedthanks to the ldquoCurrent limiterrdquo block that as soon as the Icllevel is reached forces the darlington (using the ldquoDriverrdquoblock) to limit the current provided
The transition from saturation to desaturation coil currentlimiting phase must have the ability to accommodate anovervoltage A maximum overshoot of 20V is allowed
There can be s ome short period of time in which theoutput pin (HVC) is pulled below ground by a negativecurrent due to leakage inductances and straycapacitances of the ignition coil This can cause parasiticglitches on the diagnostic output VB027
VB027(011Y) VB027(012Y) has a built-in protectioncircuit that allows to lock the p-buried layer potential of thelinear stage to the collector power when the last one ispulled underground
THERMAL BEHAVIOUR
You can see in the block diagram of the VB027
VB027(011Y) VB027(012Y) a box calledovertemperature protection The purpose of this circuit isto shift the current level at which the first diagnostic isactivated down of about 1A
This information can be managed by the micro that cantake the corrective action in order to reduce the powerdissipation This block is not an effective protection but just an overtemperature detection The sh ift down o f thefirst flag level cannot be present for temperatures lowerthan 125degC
As an example of its behavior you can suppose a verysimple motor management system in which the microdoes just a simple arithmetic calculation to decide when toswitch-off the device after the first flag threshold
EXAMPLE
IC(DIAG1) info after x ms (IC(DIAG1)=25A)
Iswitch-off info after kx ms
As soon as the temperature rises over the overtempthreshold the first diagnostic is shifted down to about15A and in this example the switch-off current will bekx15 25
OVERVOLTAGE
The VB027 VB027(011Y) VB027(012Y) canwithstand the following transients of the battery line
-100V 2ms (Ri=10Ω)
+100V 02ms (Ri=10Ω)
+50V 400ms (Ri=42 Ω with VIN=3V)
FIGURE 1 Application circuit
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 510
59
VB027 VB027(011Y) VB027(012Y)
1
FIGURE 2 Switching waveform
FIGURE 3 Maximum Icl VS temperature
FIGURE 5 IC(diag2) VS temperature
FIGURE 4 IC(diag1) VS temperature
1
VIN
2nd Threshold
1st Threshold
Icl
DIAG
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 610
69
VB027 VB027(011Y) VB027(012Y)
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L 1560 1730 614 0681
L1 1460 1522 0575 0599
L2 2120 2185 0835 0860
L3 2220 2282 0874 0898
L5 260 3 0102 0118
L6 1510 1580 0594 0622
L7 6 660 0236 0260
M 250 310 0098 0122
M1 450 560 0177 0220
R 050 002
V4 90deg (typ)
Diam 365 385 0144 0152
P023H3
PENTAWATT HV MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 710
79
VB027 VB027(011Y) VB027(012Y)
P023H1
1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L1 390 450 0154 0177
L2 1510 1610 0594 0634
L3 480 540 0189 0213
L5 260 300 0102 0118
L6 1510 1580 0594 0622
L7 600 660 0236 026
R 05
V2 30deg (typ)
V4 90deg (typ)
DIA 365 385 0144 0152
PENTAWATT HV 011Y (horizontal) MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 810
89
VB027 VB027(011Y) VB027(012Y)
1 1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 43 48 0169 0189
A1 25 31 0098 0122
b 06 08 0024 0031
b1 075 09 003 0035
c 035 055 0014 0022
c1 122 142 0048 0056
D 9 935 0354 0368
D1 152 158 0598 0622
e 244 264 0096 0104
e1 371 391 0146 0154
E 10 104 0394 0409
L 2232 2292 0879 0902
L1 251 257 0988 1012
P 365 395 0144 0156
S 255 305 01 012
PENTAWATT HV 012Y (in line) MECHANICAL DATA
e1
e
b1
D1
S
E
b
L1
L
A1
c
D
Pc1
A
P010P
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 210
29
VB027 VB027(011Y) VB027(012Y)
1
ABSOLUTE MAXIMUM RATING
THERMAL DATA
CONNECTION DIAGRAM (TOP VIEW)
Symbol Parameter Value Unit
HVc Collector voltage Internally limited V
IC Collector current Internally limited A
Vd Driving stage supply voltage 7 V
Id Driving circuitry supply current 200 mA
VIN Input voltage 10 V
T j Junction operating temperature -40 to 150 degC
Tstg Storage temperature -55 to 150 degC
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case (MAX) 112 degCW
Rthj-amb Thermal resistance junction-ambient (MAX) 625 degCW
PIN FUNCTION (PENTAWATT HV)
No Name Function
1 GND Emitter power ground
2 Vd Driving stage supply voltage
3 HVC Primary coil output signal
4 INPUT Logic input channel
5 DIAG Diagnostic output signal
5
4
3
2
1
HVC
GND
Vd
INPUT
DIAG
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 310
39
VB027 VB027(011Y) VB027(012Y)
ELECTRICAL CHARACTERISTICS (VCC=135V Vd=5V Tj=25ordmC Rcoil=510mΩ Lcoil=7mH unless otherwisespecified)
Note 1 the primary coil current value Icl must be measured 1ms after desaturation of the power stageNote 2 t imef rom input switching VNEG until collector voltage equal 200V( ) Vd - Vbe(on)
Symbol Parameter Test Conditions Min Typ Max Unit
Vcl High volt age clamp -40degCleT jle125degC IC=6A 300 360 400 V
Vcg(sat)Power stage saturationvoltage
IC=6A VIN=4V 15 V
Vcg(sat)td
Power stage saturationvoltage derating intemperature
IC=6A VIN=4V -40degCleT jle125degC 2 V
Id(off) Power-off supply current VIN=04V 10 mA
Id(on) Power-on supply current VIN=4V IC=6A -40degCleT jle125degC 130 mA
VdDriving stage supplyvoltage
45 55 V
Icl Collector current l imit VIN=4V (See note 1) 8 85 9 A
Icl(td)
Collector current limit drift
with temperature See figure 3
VINH High level input voltage 4 55 V
VINL Low level input voltage 0 08 V
IINH High level input current VIN=4V 200 microA
VdiagHHigh level diagnosticoutput voltage
REXT=22KΩ (See figure 1) 35 () Vd V
VdiagLLow level diagnosticoutput voltage
REXT=22KΩ (See figure 1) 05 V
IC(diag1)First threshold levelcollector current
425 45 475 A
IC(diag1)td
First threshold levelcollector current drift with
temperature
See figure 4
IC(diag2)Second threshold levelcollector current
545 58 615 A
IC(diag2)td
Second threshold levelcollector current drift withtemperature
See figure 5
td(off)Turn-off delay time ofoutput current
IC=6A (See note 2) 25 micros
tf(off)Turn-off fall time of output
current IC=6A 8 micros
td(diag)Delay time of diagnosticcurrent
REXT=22KΩ (See figure 1) 1 micros
tr(diag)Turn-on rise time ofdiagnostic current
REXT=22KΩ (See figure 1) 1 micros
tf(diag)Turn-off fall time ofdiagnostic current REXT=22KΩ (See figure 1) 1 micros
1
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 410
49
VB027 VB027(011Y) VB027(012Y)
1
PRINCIPLE OF OPERATION
The VB027 VB027(011Y) VB027(012Y) is mainly
intended as high voltage power switch device driven by alogic level input and interfaces directly to a high energyelectronic ignition coil
T he input VIN of the VB027 VB027(011Y)VB027(012Y) is fed from a low power signal generatedby an external controller that determines both dwell timeand ignition point During VIN high (ge4V) the VB027VB027(011Y) VB027(012Y) increases current in thecoil to the desired internally set current level
When the collector current exceeds 45A the diagnosticsignal is turned high and it remains so until the loadcurrent reaches 58A (second threshold) At that valuethe diagnostic signal is turned low and the microC forces theVIN to the low state During the coil current switch-off the
primary voltage H VC is clamped by a series of Zenerdiodes at an internally set value Vcl typically 360V
The collector current sensed throughthe Rsense is limitedthanks to the ldquoCurrent limiterrdquo block that as soon as the Icllevel is reached forces the darlington (using the ldquoDriverrdquoblock) to limit the current provided
The transition from saturation to desaturation coil currentlimiting phase must have the ability to accommodate anovervoltage A maximum overshoot of 20V is allowed
There can be s ome short period of time in which theoutput pin (HVC) is pulled below ground by a negativecurrent due to leakage inductances and straycapacitances of the ignition coil This can cause parasiticglitches on the diagnostic output VB027
VB027(011Y) VB027(012Y) has a built-in protectioncircuit that allows to lock the p-buried layer potential of thelinear stage to the collector power when the last one ispulled underground
THERMAL BEHAVIOUR
You can see in the block diagram of the VB027
VB027(011Y) VB027(012Y) a box calledovertemperature protection The purpose of this circuit isto shift the current level at which the first diagnostic isactivated down of about 1A
This information can be managed by the micro that cantake the corrective action in order to reduce the powerdissipation This block is not an effective protection but just an overtemperature detection The sh ift down o f thefirst flag level cannot be present for temperatures lowerthan 125degC
As an example of its behavior you can suppose a verysimple motor management system in which the microdoes just a simple arithmetic calculation to decide when toswitch-off the device after the first flag threshold
EXAMPLE
IC(DIAG1) info after x ms (IC(DIAG1)=25A)
Iswitch-off info after kx ms
As soon as the temperature rises over the overtempthreshold the first diagnostic is shifted down to about15A and in this example the switch-off current will bekx15 25
OVERVOLTAGE
The VB027 VB027(011Y) VB027(012Y) canwithstand the following transients of the battery line
-100V 2ms (Ri=10Ω)
+100V 02ms (Ri=10Ω)
+50V 400ms (Ri=42 Ω with VIN=3V)
FIGURE 1 Application circuit
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 510
59
VB027 VB027(011Y) VB027(012Y)
1
FIGURE 2 Switching waveform
FIGURE 3 Maximum Icl VS temperature
FIGURE 5 IC(diag2) VS temperature
FIGURE 4 IC(diag1) VS temperature
1
VIN
2nd Threshold
1st Threshold
Icl
DIAG
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 610
69
VB027 VB027(011Y) VB027(012Y)
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L 1560 1730 614 0681
L1 1460 1522 0575 0599
L2 2120 2185 0835 0860
L3 2220 2282 0874 0898
L5 260 3 0102 0118
L6 1510 1580 0594 0622
L7 6 660 0236 0260
M 250 310 0098 0122
M1 450 560 0177 0220
R 050 002
V4 90deg (typ)
Diam 365 385 0144 0152
P023H3
PENTAWATT HV MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 710
79
VB027 VB027(011Y) VB027(012Y)
P023H1
1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L1 390 450 0154 0177
L2 1510 1610 0594 0634
L3 480 540 0189 0213
L5 260 300 0102 0118
L6 1510 1580 0594 0622
L7 600 660 0236 026
R 05
V2 30deg (typ)
V4 90deg (typ)
DIA 365 385 0144 0152
PENTAWATT HV 011Y (horizontal) MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 810
89
VB027 VB027(011Y) VB027(012Y)
1 1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 43 48 0169 0189
A1 25 31 0098 0122
b 06 08 0024 0031
b1 075 09 003 0035
c 035 055 0014 0022
c1 122 142 0048 0056
D 9 935 0354 0368
D1 152 158 0598 0622
e 244 264 0096 0104
e1 371 391 0146 0154
E 10 104 0394 0409
L 2232 2292 0879 0902
L1 251 257 0988 1012
P 365 395 0144 0156
S 255 305 01 012
PENTAWATT HV 012Y (in line) MECHANICAL DATA
e1
e
b1
D1
S
E
b
L1
L
A1
c
D
Pc1
A
P010P
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 310
39
VB027 VB027(011Y) VB027(012Y)
ELECTRICAL CHARACTERISTICS (VCC=135V Vd=5V Tj=25ordmC Rcoil=510mΩ Lcoil=7mH unless otherwisespecified)
Note 1 the primary coil current value Icl must be measured 1ms after desaturation of the power stageNote 2 t imef rom input switching VNEG until collector voltage equal 200V( ) Vd - Vbe(on)
Symbol Parameter Test Conditions Min Typ Max Unit
Vcl High volt age clamp -40degCleT jle125degC IC=6A 300 360 400 V
Vcg(sat)Power stage saturationvoltage
IC=6A VIN=4V 15 V
Vcg(sat)td
Power stage saturationvoltage derating intemperature
IC=6A VIN=4V -40degCleT jle125degC 2 V
Id(off) Power-off supply current VIN=04V 10 mA
Id(on) Power-on supply current VIN=4V IC=6A -40degCleT jle125degC 130 mA
VdDriving stage supplyvoltage
45 55 V
Icl Collector current l imit VIN=4V (See note 1) 8 85 9 A
Icl(td)
Collector current limit drift
with temperature See figure 3
VINH High level input voltage 4 55 V
VINL Low level input voltage 0 08 V
IINH High level input current VIN=4V 200 microA
VdiagHHigh level diagnosticoutput voltage
REXT=22KΩ (See figure 1) 35 () Vd V
VdiagLLow level diagnosticoutput voltage
REXT=22KΩ (See figure 1) 05 V
IC(diag1)First threshold levelcollector current
425 45 475 A
IC(diag1)td
First threshold levelcollector current drift with
temperature
See figure 4
IC(diag2)Second threshold levelcollector current
545 58 615 A
IC(diag2)td
Second threshold levelcollector current drift withtemperature
See figure 5
td(off)Turn-off delay time ofoutput current
IC=6A (See note 2) 25 micros
tf(off)Turn-off fall time of output
current IC=6A 8 micros
td(diag)Delay time of diagnosticcurrent
REXT=22KΩ (See figure 1) 1 micros
tr(diag)Turn-on rise time ofdiagnostic current
REXT=22KΩ (See figure 1) 1 micros
tf(diag)Turn-off fall time ofdiagnostic current REXT=22KΩ (See figure 1) 1 micros
1
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 410
49
VB027 VB027(011Y) VB027(012Y)
1
PRINCIPLE OF OPERATION
The VB027 VB027(011Y) VB027(012Y) is mainly
intended as high voltage power switch device driven by alogic level input and interfaces directly to a high energyelectronic ignition coil
T he input VIN of the VB027 VB027(011Y)VB027(012Y) is fed from a low power signal generatedby an external controller that determines both dwell timeand ignition point During VIN high (ge4V) the VB027VB027(011Y) VB027(012Y) increases current in thecoil to the desired internally set current level
When the collector current exceeds 45A the diagnosticsignal is turned high and it remains so until the loadcurrent reaches 58A (second threshold) At that valuethe diagnostic signal is turned low and the microC forces theVIN to the low state During the coil current switch-off the
primary voltage H VC is clamped by a series of Zenerdiodes at an internally set value Vcl typically 360V
The collector current sensed throughthe Rsense is limitedthanks to the ldquoCurrent limiterrdquo block that as soon as the Icllevel is reached forces the darlington (using the ldquoDriverrdquoblock) to limit the current provided
The transition from saturation to desaturation coil currentlimiting phase must have the ability to accommodate anovervoltage A maximum overshoot of 20V is allowed
There can be s ome short period of time in which theoutput pin (HVC) is pulled below ground by a negativecurrent due to leakage inductances and straycapacitances of the ignition coil This can cause parasiticglitches on the diagnostic output VB027
VB027(011Y) VB027(012Y) has a built-in protectioncircuit that allows to lock the p-buried layer potential of thelinear stage to the collector power when the last one ispulled underground
THERMAL BEHAVIOUR
You can see in the block diagram of the VB027
VB027(011Y) VB027(012Y) a box calledovertemperature protection The purpose of this circuit isto shift the current level at which the first diagnostic isactivated down of about 1A
This information can be managed by the micro that cantake the corrective action in order to reduce the powerdissipation This block is not an effective protection but just an overtemperature detection The sh ift down o f thefirst flag level cannot be present for temperatures lowerthan 125degC
As an example of its behavior you can suppose a verysimple motor management system in which the microdoes just a simple arithmetic calculation to decide when toswitch-off the device after the first flag threshold
EXAMPLE
IC(DIAG1) info after x ms (IC(DIAG1)=25A)
Iswitch-off info after kx ms
As soon as the temperature rises over the overtempthreshold the first diagnostic is shifted down to about15A and in this example the switch-off current will bekx15 25
OVERVOLTAGE
The VB027 VB027(011Y) VB027(012Y) canwithstand the following transients of the battery line
-100V 2ms (Ri=10Ω)
+100V 02ms (Ri=10Ω)
+50V 400ms (Ri=42 Ω with VIN=3V)
FIGURE 1 Application circuit
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 510
59
VB027 VB027(011Y) VB027(012Y)
1
FIGURE 2 Switching waveform
FIGURE 3 Maximum Icl VS temperature
FIGURE 5 IC(diag2) VS temperature
FIGURE 4 IC(diag1) VS temperature
1
VIN
2nd Threshold
1st Threshold
Icl
DIAG
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 610
69
VB027 VB027(011Y) VB027(012Y)
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L 1560 1730 614 0681
L1 1460 1522 0575 0599
L2 2120 2185 0835 0860
L3 2220 2282 0874 0898
L5 260 3 0102 0118
L6 1510 1580 0594 0622
L7 6 660 0236 0260
M 250 310 0098 0122
M1 450 560 0177 0220
R 050 002
V4 90deg (typ)
Diam 365 385 0144 0152
P023H3
PENTAWATT HV MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 710
79
VB027 VB027(011Y) VB027(012Y)
P023H1
1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L1 390 450 0154 0177
L2 1510 1610 0594 0634
L3 480 540 0189 0213
L5 260 300 0102 0118
L6 1510 1580 0594 0622
L7 600 660 0236 026
R 05
V2 30deg (typ)
V4 90deg (typ)
DIA 365 385 0144 0152
PENTAWATT HV 011Y (horizontal) MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 810
89
VB027 VB027(011Y) VB027(012Y)
1 1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 43 48 0169 0189
A1 25 31 0098 0122
b 06 08 0024 0031
b1 075 09 003 0035
c 035 055 0014 0022
c1 122 142 0048 0056
D 9 935 0354 0368
D1 152 158 0598 0622
e 244 264 0096 0104
e1 371 391 0146 0154
E 10 104 0394 0409
L 2232 2292 0879 0902
L1 251 257 0988 1012
P 365 395 0144 0156
S 255 305 01 012
PENTAWATT HV 012Y (in line) MECHANICAL DATA
e1
e
b1
D1
S
E
b
L1
L
A1
c
D
Pc1
A
P010P
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 410
49
VB027 VB027(011Y) VB027(012Y)
1
PRINCIPLE OF OPERATION
The VB027 VB027(011Y) VB027(012Y) is mainly
intended as high voltage power switch device driven by alogic level input and interfaces directly to a high energyelectronic ignition coil
T he input VIN of the VB027 VB027(011Y)VB027(012Y) is fed from a low power signal generatedby an external controller that determines both dwell timeand ignition point During VIN high (ge4V) the VB027VB027(011Y) VB027(012Y) increases current in thecoil to the desired internally set current level
When the collector current exceeds 45A the diagnosticsignal is turned high and it remains so until the loadcurrent reaches 58A (second threshold) At that valuethe diagnostic signal is turned low and the microC forces theVIN to the low state During the coil current switch-off the
primary voltage H VC is clamped by a series of Zenerdiodes at an internally set value Vcl typically 360V
The collector current sensed throughthe Rsense is limitedthanks to the ldquoCurrent limiterrdquo block that as soon as the Icllevel is reached forces the darlington (using the ldquoDriverrdquoblock) to limit the current provided
The transition from saturation to desaturation coil currentlimiting phase must have the ability to accommodate anovervoltage A maximum overshoot of 20V is allowed
There can be s ome short period of time in which theoutput pin (HVC) is pulled below ground by a negativecurrent due to leakage inductances and straycapacitances of the ignition coil This can cause parasiticglitches on the diagnostic output VB027
VB027(011Y) VB027(012Y) has a built-in protectioncircuit that allows to lock the p-buried layer potential of thelinear stage to the collector power when the last one ispulled underground
THERMAL BEHAVIOUR
You can see in the block diagram of the VB027
VB027(011Y) VB027(012Y) a box calledovertemperature protection The purpose of this circuit isto shift the current level at which the first diagnostic isactivated down of about 1A
This information can be managed by the micro that cantake the corrective action in order to reduce the powerdissipation This block is not an effective protection but just an overtemperature detection The sh ift down o f thefirst flag level cannot be present for temperatures lowerthan 125degC
As an example of its behavior you can suppose a verysimple motor management system in which the microdoes just a simple arithmetic calculation to decide when toswitch-off the device after the first flag threshold
EXAMPLE
IC(DIAG1) info after x ms (IC(DIAG1)=25A)
Iswitch-off info after kx ms
As soon as the temperature rises over the overtempthreshold the first diagnostic is shifted down to about15A and in this example the switch-off current will bekx15 25
OVERVOLTAGE
The VB027 VB027(011Y) VB027(012Y) canwithstand the following transients of the battery line
-100V 2ms (Ri=10Ω)
+100V 02ms (Ri=10Ω)
+50V 400ms (Ri=42 Ω with VIN=3V)
FIGURE 1 Application circuit
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 510
59
VB027 VB027(011Y) VB027(012Y)
1
FIGURE 2 Switching waveform
FIGURE 3 Maximum Icl VS temperature
FIGURE 5 IC(diag2) VS temperature
FIGURE 4 IC(diag1) VS temperature
1
VIN
2nd Threshold
1st Threshold
Icl
DIAG
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 610
69
VB027 VB027(011Y) VB027(012Y)
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L 1560 1730 614 0681
L1 1460 1522 0575 0599
L2 2120 2185 0835 0860
L3 2220 2282 0874 0898
L5 260 3 0102 0118
L6 1510 1580 0594 0622
L7 6 660 0236 0260
M 250 310 0098 0122
M1 450 560 0177 0220
R 050 002
V4 90deg (typ)
Diam 365 385 0144 0152
P023H3
PENTAWATT HV MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 710
79
VB027 VB027(011Y) VB027(012Y)
P023H1
1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L1 390 450 0154 0177
L2 1510 1610 0594 0634
L3 480 540 0189 0213
L5 260 300 0102 0118
L6 1510 1580 0594 0622
L7 600 660 0236 026
R 05
V2 30deg (typ)
V4 90deg (typ)
DIA 365 385 0144 0152
PENTAWATT HV 011Y (horizontal) MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 810
89
VB027 VB027(011Y) VB027(012Y)
1 1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 43 48 0169 0189
A1 25 31 0098 0122
b 06 08 0024 0031
b1 075 09 003 0035
c 035 055 0014 0022
c1 122 142 0048 0056
D 9 935 0354 0368
D1 152 158 0598 0622
e 244 264 0096 0104
e1 371 391 0146 0154
E 10 104 0394 0409
L 2232 2292 0879 0902
L1 251 257 0988 1012
P 365 395 0144 0156
S 255 305 01 012
PENTAWATT HV 012Y (in line) MECHANICAL DATA
e1
e
b1
D1
S
E
b
L1
L
A1
c
D
Pc1
A
P010P
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 510
59
VB027 VB027(011Y) VB027(012Y)
1
FIGURE 2 Switching waveform
FIGURE 3 Maximum Icl VS temperature
FIGURE 5 IC(diag2) VS temperature
FIGURE 4 IC(diag1) VS temperature
1
VIN
2nd Threshold
1st Threshold
Icl
DIAG
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 610
69
VB027 VB027(011Y) VB027(012Y)
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L 1560 1730 614 0681
L1 1460 1522 0575 0599
L2 2120 2185 0835 0860
L3 2220 2282 0874 0898
L5 260 3 0102 0118
L6 1510 1580 0594 0622
L7 6 660 0236 0260
M 250 310 0098 0122
M1 450 560 0177 0220
R 050 002
V4 90deg (typ)
Diam 365 385 0144 0152
P023H3
PENTAWATT HV MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 710
79
VB027 VB027(011Y) VB027(012Y)
P023H1
1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L1 390 450 0154 0177
L2 1510 1610 0594 0634
L3 480 540 0189 0213
L5 260 300 0102 0118
L6 1510 1580 0594 0622
L7 600 660 0236 026
R 05
V2 30deg (typ)
V4 90deg (typ)
DIA 365 385 0144 0152
PENTAWATT HV 011Y (horizontal) MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 810
89
VB027 VB027(011Y) VB027(012Y)
1 1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 43 48 0169 0189
A1 25 31 0098 0122
b 06 08 0024 0031
b1 075 09 003 0035
c 035 055 0014 0022
c1 122 142 0048 0056
D 9 935 0354 0368
D1 152 158 0598 0622
e 244 264 0096 0104
e1 371 391 0146 0154
E 10 104 0394 0409
L 2232 2292 0879 0902
L1 251 257 0988 1012
P 365 395 0144 0156
S 255 305 01 012
PENTAWATT HV 012Y (in line) MECHANICAL DATA
e1
e
b1
D1
S
E
b
L1
L
A1
c
D
Pc1
A
P010P
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 610
69
VB027 VB027(011Y) VB027(012Y)
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L 1560 1730 614 0681
L1 1460 1522 0575 0599
L2 2120 2185 0835 0860
L3 2220 2282 0874 0898
L5 260 3 0102 0118
L6 1510 1580 0594 0622
L7 6 660 0236 0260
M 250 310 0098 0122
M1 450 560 0177 0220
R 050 002
V4 90deg (typ)
Diam 365 385 0144 0152
P023H3
PENTAWATT HV MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 710
79
VB027 VB027(011Y) VB027(012Y)
P023H1
1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L1 390 450 0154 0177
L2 1510 1610 0594 0634
L3 480 540 0189 0213
L5 260 300 0102 0118
L6 1510 1580 0594 0622
L7 600 660 0236 026
R 05
V2 30deg (typ)
V4 90deg (typ)
DIA 365 385 0144 0152
PENTAWATT HV 011Y (horizontal) MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 810
89
VB027 VB027(011Y) VB027(012Y)
1 1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 43 48 0169 0189
A1 25 31 0098 0122
b 06 08 0024 0031
b1 075 09 003 0035
c 035 055 0014 0022
c1 122 142 0048 0056
D 9 935 0354 0368
D1 152 158 0598 0622
e 244 264 0096 0104
e1 371 391 0146 0154
E 10 104 0394 0409
L 2232 2292 0879 0902
L1 251 257 0988 1012
P 365 395 0144 0156
S 255 305 01 012
PENTAWATT HV 012Y (in line) MECHANICAL DATA
e1
e
b1
D1
S
E
b
L1
L
A1
c
D
Pc1
A
P010P
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 710
79
VB027 VB027(011Y) VB027(012Y)
P023H1
1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 430 480 0169 0189
C 117 137 0046 0054
D 240 280 0094 011
E 035 055 0014 0022
F 060 080 0024 0031
G1 491 521 0193 0205
G2 749 780 0295 0307
H1 930 970 0366 0382
H2 1040 0409
H3 1005 1040 0396 0409
L1 390 450 0154 0177
L2 1510 1610 0594 0634
L3 480 540 0189 0213
L5 260 300 0102 0118
L6 1510 1580 0594 0622
L7 600 660 0236 026
R 05
V2 30deg (typ)
V4 90deg (typ)
DIA 365 385 0144 0152
PENTAWATT HV 011Y (horizontal) MECHANICAL DATA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 810
89
VB027 VB027(011Y) VB027(012Y)
1 1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 43 48 0169 0189
A1 25 31 0098 0122
b 06 08 0024 0031
b1 075 09 003 0035
c 035 055 0014 0022
c1 122 142 0048 0056
D 9 935 0354 0368
D1 152 158 0598 0622
e 244 264 0096 0104
e1 371 391 0146 0154
E 10 104 0394 0409
L 2232 2292 0879 0902
L1 251 257 0988 1012
P 365 395 0144 0156
S 255 305 01 012
PENTAWATT HV 012Y (in line) MECHANICAL DATA
e1
e
b1
D1
S
E
b
L1
L
A1
c
D
Pc1
A
P010P
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 810
89
VB027 VB027(011Y) VB027(012Y)
1 1
DIMmm inch
MIN TYP MAX MIN TYP MAX
A 43 48 0169 0189
A1 25 31 0098 0122
b 06 08 0024 0031
b1 075 09 003 0035
c 035 055 0014 0022
c1 122 142 0048 0056
D 9 935 0354 0368
D1 152 158 0598 0622
e 244 264 0096 0104
e1 371 391 0146 0154
E 10 104 0394 0409
L 2232 2292 0879 0902
L1 251 257 0988 1012
P 365 395 0144 0156
S 255 305 01 012
PENTAWATT HV 012Y (in line) MECHANICAL DATA
e1
e
b1
D1
S
E
b
L1
L
A1
c
D
Pc1
A
P010P
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 910
99
VB027 VB027(011Y) VB027(012Y)
Information furnished is believed to be accurate and reliable However STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may results from its use No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics Specifications mentioned in this publication aresubject to change without notice This publication supersedes and replaces all information previously supplied STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics
The ST logo is a registered trademarkof STMicroelectronics
copy 1998 STMicroelectronics - Printed in ITALY- All Rights Reserved
STMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada- China - France - Germany- Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco -
The Netherlands- Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - USA
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
7272019 Transistor Dos Bicos
httpslidepdfcomreaderfulltransistor-dos-bicos 1010
This datasheet has been download from
wwwdatasheetcatalogcom
Datasheets for electronics components
